All MOSFET. CEU5175 Datasheet

 

CEU5175 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CEU5175
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 35 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 315 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO-252

 CEU5175 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEU5175 Datasheet (PDF)

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 ced5175 ceu5175.pdf

CEU5175 CEU5175

CED5175/CEU5175P-Channel Enhancement Mode Field Effect TransistorFEATURES-55V, -40A, RDS(ON) = 23m @VGS = -10V. RDS(ON) = 28m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUT

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IRF9Z24N

 

 
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