All MOSFET. CEU5175 Datasheet

 

CEU5175 Datasheet and Replacement


   Type Designator: CEU5175
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 315 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO-252
 

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CEU5175 Datasheet (PDF)

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CEU5175

CED5175/CEU5175P-Channel Enhancement Mode Field Effect TransistorFEATURES-55V, -40A, RDS(ON) = 23m @VGS = -10V. RDS(ON) = 28m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUT

Datasheet: CEF30N3 , CEM101 , CEM2133 , CEM4248 , CEP05N8 , CEP110P03 , CEP18N5 , CEP30N3 , NCEP15T14 , HX2N60 , HX4N60 , HX50N06-TA3 , HX5N6 , HX70N06-TA3 , HX70N6 , HY10N65T , HY110N06T .

History: CEU02N9 | MTP1406L3

Keywords - CEU5175 MOSFET datasheet

 CEU5175 cross reference
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