CEU5175 Specs and Replacement
Type Designator: CEU5175
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 68 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 315 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TO-252
CEU5175 substitution
- MOSFET ⓘ Cross-Reference Search
CEU5175 datasheet
ced5175 ceu5175.pdf
CED5175/CEU5175 P-Channel Enhancement Mode Field Effect Transistor FEATURES -55V, -40A, RDS(ON) = 23m @VGS = -10V. RDS(ON) = 28m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUT... See More ⇒
Detailed specifications: CEF30N3, CEM101, CEM2133, CEM4248, CEP05N8, CEP110P03, CEP18N5, CEP30N3, IRF2807, HX2N60, HX4N60, HX50N06-TA3, HX5N6, HX70N06-TA3, HX70N6, HY10N65T, HY110N06T
Keywords - CEU5175 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
