All MOSFET. HX2N60 Datasheet

 

HX2N60 Datasheet and Replacement


   Type Designator: HX2N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 23.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO-220 TO-220F TO-251 TO-252
 

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HX2N60 Datasheet (PDF)

 ..1. Size:1215K  sipower
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HX2N60

 0.1. Size:64K  philips
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HX2N60

Philips Semiconductors Product specification PowerMOS transistors PHX2N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 1.3 Ag Isolated packageRDS(ON) 6 sGENERAL DESCRIPTION PINNING SOT186AN-channel, enhan

Datasheet: CEM101 , CEM2133 , CEM4248 , CEP05N8 , CEP110P03 , CEP18N5 , CEP30N3 , CEU5175 , IRF2807 , HX4N60 , HX50N06-TA3 , HX5N6 , HX70N06-TA3 , HX70N6 , HY10N65T , HY110N06T , HY125N10T .

History: IRFS532 | IRF3709SPBF | AP95T10GI | AP60WN2K3I | CJAC110SN10 | SUD45P03-10 | IRFP351

Keywords - HX2N60 MOSFET datasheet

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