All MOSFET. HX2N60 Datasheet

 

HX2N60 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HX2N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 23.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO-220 TO-220F TO-251 TO-252

 HX2N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HX2N60 Datasheet (PDF)

 ..1. Size:1215K  sipower
 hx2n60.pdf

HX2N60 HX2N60

 0.1. Size:64K  philips
 phx2n60e 3.pdf

HX2N60 HX2N60

Philips Semiconductors Product specification PowerMOS transistors PHX2N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 1.3 Ag Isolated packageRDS(ON) 6 sGENERAL DESCRIPTION PINNING SOT186AN-channel, enhan

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: SUP53P06-20 | 2N6969JANTX | SFF50N20 | RFG60P06E | ME20P03-G | SW1N60A | APT5020SVFR

 

 
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