HX2N60 Specs and Replacement
Type Designator: HX2N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 23.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 20 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO-220 TO-220F TO-251 TO-252
HX2N60 substitution
- MOSFET ⓘ Cross-Reference Search
HX2N60 datasheet
phx2n60e 3.pdf
Philips Semiconductors Product specification PowerMOS transistors PHX2N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 1.3 A g Isolated package RDS(ON) 6 s GENERAL DESCRIPTION PINNING SOT186A N-channel, enhan... See More ⇒
Detailed specifications: CEM101, CEM2133, CEM4248, CEP05N8, CEP110P03, CEP18N5, CEP30N3, CEU5175, STF13NM60N, HX4N60, HX50N06-TA3, HX5N6, HX70N06-TA3, HX70N6, HY10N65T, HY110N06T, HY125N10T
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
