HX4N60 Specs and Replacement

Type Designator: HX4N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 42 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO-220 TO-220F TO-251 TO-252

HX4N60 substitution

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HX4N60 datasheet

 ..1. Size:1222K  sipower
 hx4n60.pdf pdf_icon

HX4N60

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 0.1. Size:83K  philips
 phx4n60e.pdf pdf_icon

HX4N60

Philips Semiconductors Product specification PowerMOS transistors PHX4N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 2.4 A g Isolated package RDS(ON) 2.5 s GENERAL DESCRIPTION PINNING SOT186A N-channel, enh... See More ⇒

Detailed specifications: CEM2133, CEM4248, CEP05N8, CEP110P03, CEP18N5, CEP30N3, CEU5175, HX2N60, IRFZ24N, HX50N06-TA3, HX5N6, HX70N06-TA3, HX70N6, HY10N65T, HY110N06T, HY125N10T, HY12N65T

Keywords - HX4N60 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs