All MOSFET. HX4N60 Datasheet

 

HX4N60 Datasheet and Replacement


   Type Designator: HX4N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO-220 TO-220F TO-251 TO-252
 

 HX4N60 substitution

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HX4N60 Datasheet (PDF)

 ..1. Size:1222K  sipower
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HX4N60

 0.1. Size:83K  philips
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HX4N60

Philips Semiconductors Product specification PowerMOS transistors PHX4N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 2.4 Ag Isolated packageRDS(ON) 2.5 sGENERAL DESCRIPTION PINNING SOT186AN-channel, enh

Datasheet: CEM2133 , CEM4248 , CEP05N8 , CEP110P03 , CEP18N5 , CEP30N3 , CEU5175 , HX2N60 , AON6380 , HX50N06-TA3 , HX5N6 , HX70N06-TA3 , HX70N6 , HY10N65T , HY110N06T , HY125N10T , HY12N65T .

History: AM20N10-115D | APT30F60J | HGN080N10A | STN3414 | BUK9K18-40E | CS6N70F | YJG90G10A

Keywords - HX4N60 MOSFET datasheet

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