HX5N6 Specs and Replacement

Type Designator: HX5N6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 430 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: TO-220

HX5N6 substitution

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HX5N6 datasheet

 ..1. Size:929K  sipower
 hx50n06-ta3 hx5n6.pdf pdf_icon

HX5N6

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Detailed specifications: CEP05N8, CEP110P03, CEP18N5, CEP30N3, CEU5175, HX2N60, HX4N60, HX50N06-TA3, 8N60, HX70N06-TA3, HX70N6, HY10N65T, HY110N06T, HY125N10T, HY12N65T, HY13N50T, HY150N075T

Keywords - HX5N6 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.