All MOSFET. HY10N65T Datasheet

 

HY10N65T Datasheet and Replacement


   Type Designator: HY10N65T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21.6 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-220AB
 

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HY10N65T Datasheet (PDF)

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HY10N65T

HY10N65T / HY10N65FT650V / 10A650V, RDS(ON)=1.0@VGS=10V, ID=5.0AN-Channel Enhancement Mode MOSFETFeatures Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS112 2 In compliance with EU RoHs 2002/95/EC Directives G G33DDS

Datasheet: CEP30N3 , CEU5175 , HX2N60 , HX4N60 , HX50N06-TA3 , HX5N6 , HX70N06-TA3 , HX70N6 , RU6888R , HY110N06T , HY125N10T , HY12N65T , HY13N50T , HY150N075T , HY18N20D , HY18N20T , HY18N50W .

History: GSM8936 | SI1489EDH

Keywords - HY10N65T MOSFET datasheet

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