HY10N65T Specs and Replacement
Type Designator: HY10N65T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21.6 nS
Cossⓘ - Output Capacitance: 145 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO-220AB
HY10N65T substitution
- MOSFET ⓘ Cross-Reference Search
HY10N65T datasheet
hy10n65t.pdf
HY10N65T / HY10N65FT 650V / 10A 650V, RDS(ON)=1.0 @VGS=10V, ID=5.0A N-Channel Enhancement Mode MOSFET Features Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS 1 1 2 2 In compliance with EU RoHs 2002/95/EC Directives G G 3 3 D D S ... See More ⇒
Detailed specifications: CEP30N3, CEU5175, HX2N60, HX4N60, HX50N06-TA3, HX5N6, HX70N06-TA3, HX70N6, AO3400A, HY110N06T, HY125N10T, HY12N65T, HY13N50T, HY150N075T, HY18N20D, HY18N20T, HY18N50W
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