HY1N60D Specs and Replacement
Type Designator: HY1N60D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 39 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6.6 nS
Cossⓘ - Output Capacitance: 22 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
Package: TO-252
HY1N60D substitution
- MOSFET ⓘ Cross-Reference Search
HY1N60D datasheet
hy1n60d.pdf
HY1N60D / HY1N60M 600V / 1.0A 600V, RDS(ON)=12 @VGS=10V, ID=0.5A N-Channel Enhancement Mode MOSFET Features Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger 2 1 1 D G 2 In compliance with EU RoHs 2002/95/EC Directives G 3 DS3 S Mechanical In... See More ⇒
Detailed specifications: HY110N06T, HY125N10T, HY12N65T, HY13N50T, HY150N075T, HY18N20D, HY18N20T, HY18N50W, IRF9640, HY2N60D, HY2N60T, HY2N65D, HY2N65T, HY2N70D, HY2N70T, HY3N80T, HY4N60D
Keywords - HY1N60D MOSFET specs
HY1N60D cross reference
HY1N60D equivalent finder
HY1N60D pdf lookup
HY1N60D substitution
HY1N60D replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
