All MOSFET. HY1N60D Datasheet

 

HY1N60D Datasheet and Replacement


   Type Designator: HY1N60D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6.6 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
   Package: TO-252
 

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HY1N60D Datasheet (PDF)

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HY1N60D

HY1N60D / HY1N60M600V / 1.0A600V, RDS(ON)=12@VGS=10V, ID=0.5AN-Channel Enhancement Mode MOSFETFeatures Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger21 1D G 2 In compliance with EU RoHs 2002/95/EC Directives G3DS3SMechanical In

Datasheet: HY110N06T , HY125N10T , HY12N65T , HY13N50T , HY150N075T , HY18N20D , HY18N20T , HY18N50W , IRF9640 , HY2N60D , HY2N60T , HY2N65D , HY2N65T , HY2N70D , HY2N70T , HY3N80T , HY4N60D .

History: CHM2313QGP

Keywords - HY1N60D MOSFET datasheet

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