All MOSFET. HY2N70D Datasheet

 

HY2N70D Datasheet and Replacement


   Type Designator: HY2N70D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 43.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26.8 nS
   Cossⓘ - Output Capacitance: 32 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm
   Package: TO-252
 

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HY2N70D Datasheet (PDF)

 ..1. Size:168K  hy
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HY2N70D

SINGLEFIG.SINGLE CURVE FIG. 2 NON-T1 FORWARD CURRENTAMBIENT1 2MAXIMUM5 101 25 50 PHASE HALF WAVE 60Hz () 150 175 0.00 0.2 0.4 0.6 4 TEMPERATURE DERATING 100 75 10 20 100 125HY2N70D / HY2N70M 700V / 2A700V, RDS(ON)=6.5W@VGS=10V, ID=1AN-Channel Enhancement Mode MOSFETFeaturesTO-252 TO-251 Low On-State Resistance Fast Switching Low Gate Cha

 8.1. Size:146K  hy
 hy2n70t.pdf pdf_icon

HY2N70D

HY2N70T / HY2N70FT 700V / 2A700V, RDS(ON)=6.5W@VGS=10V, ID=1AN-Channel Enhancement Mode MOSFETFeaturesTO-220AB ITO-220AB Low On-State Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS In compliance with EU RoHs 2002/95/EC Directives 1 1

Datasheet: HY18N20D , HY18N20T , HY18N50W , HY1N60D , HY2N60D , HY2N60T , HY2N65D , HY2N65T , MMD60R360PRH , HY2N70T , HY3N80T , HY4N60D , HY4N60T , HY4N65D , HY4N65T , HY4N70D , HY4N70T .

History: NCE50NF520K | NCE60NF055T | AP3990R-HF | APT20M40HVR | IXTT24N50Q | MPSW65M046CFD | 2SK664

Keywords - HY2N70D MOSFET datasheet

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