HY3N80T PDF and Equivalents Search

 

HY3N80T Specs and Replacement

Type Designator: HY3N80T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 68.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32.6 nS

Cossⓘ - Output Capacitance: 38 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm

Package: TO-220AB

HY3N80T substitution

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HY3N80T datasheet

 ..1. Size:145K  hy
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HY3N80T

HY3N80T / HY3N80FT 800V / 3A 800V, RDS(ON)=4.8W@VGS=10V, ID=1.5A N-Channel Enhancement Mode MOSFET Features TO-220AB ITO-220AB Low On-State Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS In compliance with EU RoHs 2002/95/EC Directives 1 ... See More ⇒

Detailed specifications: HY18N50W , HY1N60D , HY2N60D , HY2N60T , HY2N65D , HY2N65T , HY2N70D , HY2N70T , AOD4184A , HY4N60D , HY4N60T , HY4N65D , HY4N65T , HY4N70D , HY4N70T , HY5N50T , HY6N60D .

History: BRCS050N03DSC

Keywords - HY3N80T MOSFET specs

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