All MOSFET. HY3N80T Datasheet

 

HY3N80T Datasheet and Replacement


   Type Designator: HY3N80T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 68.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32.6 nS
   Cossⓘ - Output Capacitance: 38 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
   Package: TO-220AB
 

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HY3N80T Datasheet (PDF)

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HY3N80T

HY3N80T / HY3N80FT 800V / 3A800V, RDS(ON)=4.8W@VGS=10V, ID=1.5AN-Channel Enhancement Mode MOSFETFeaturesTO-220AB ITO-220AB Low On-State Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS In compliance with EU RoHs 2002/95/EC Directives 1

Datasheet: HY18N50W , HY1N60D , HY2N60D , HY2N60T , HY2N65D , HY2N65T , HY2N70D , HY2N70T , AO4468 , HY4N60D , HY4N60T , HY4N65D , HY4N65T , HY4N70D , HY4N70T , HY5N50T , HY6N60D .

History: IPD12CNE8NG

Keywords - HY3N80T MOSFET datasheet

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