HY3N80T MOSFET. Datasheet pdf. Equivalent
Type Designator: HY3N80T
Marking Code: 3N80T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 68.6 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 3 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 32.6 nS
Drain-Source Capacitance (Cd): 38 pF
Maximum Drain-Source On-State Resistance (Rds): 4.8 Ohm
Package: TO-220AB
HY3N80T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HY3N80T Datasheet (PDF)
1.1. hy3n80t.pdf 
Size:145K _upd-mosfet
HY3N80T / HY3N80FT 800V / 3A 800V, RDS(ON)=4.8W@VGS=10V, ID=1.5A N-Channel Enhancement Mode MOSFET Features TO-220AB ITO-220AB • Low On-State Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charger and SMPS • In compliance with EU RoHs 2002/95/EC Directives 1
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
