All MOSFET. HY3N80T Datasheet


HY3N80T MOSFET. Datasheet pdf. Equivalent

Type Designator: HY3N80T

Marking Code: 3N80T

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 68.6 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 3 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 32.6 nS

Drain-Source Capacitance (Cd): 38 pF

Maximum Drain-Source On-State Resistance (Rds): 4.8 Ohm

Package: TO-220AB

HY3N80T Transistor Equivalent Substitute - MOSFET Cross-Reference Search


HY3N80T Datasheet (PDF)

1.1. hy3n80t.pdf Size:145K _upd-mosfet


HY3N80T / HY3N80FT 800V / 3A 800V, RDS(ON)=4.8W@VGS=10V, ID=1.5A N-Channel Enhancement Mode MOSFET Features TO-220AB ITO-220AB • Low On-State Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charger and SMPS • In compliance with EU RoHs 2002/95/EC Directives 1

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .


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