HY3N80T Datasheet and Replacement
Type Designator: HY3N80T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 68.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 32.6 nS
Cossⓘ - Output Capacitance: 38 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
Package: TO-220AB
HY3N80T substitution
HY3N80T Datasheet (PDF)
hy3n80t.pdf

HY3N80T / HY3N80FT 800V / 3A800V, RDS(ON)=4.8W@VGS=10V, ID=1.5AN-Channel Enhancement Mode MOSFETFeaturesTO-220AB ITO-220AB Low On-State Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS In compliance with EU RoHs 2002/95/EC Directives 1
Datasheet: HY18N50W , HY1N60D , HY2N60D , HY2N60T , HY2N65D , HY2N65T , HY2N70D , HY2N70T , HY1906P , HY4N60D , HY4N60T , HY4N65D , HY4N65T , HY4N70D , HY4N70T , HY5N50T , HY6N60D .
History: RJK2508DPK | PSMN1R5-30YLC | P6010DTG
Keywords - HY3N80T MOSFET datasheet
HY3N80T cross reference
HY3N80T equivalent finder
HY3N80T lookup
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History: RJK2508DPK | PSMN1R5-30YLC | P6010DTG



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