HY4N70D Specs and Replacement

Type Designator: HY4N70D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36.8 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm

Package: TO-252

HY4N70D substitution

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HY4N70D datasheet

 ..1. Size:167K  hy
 hy4n70d.pdf pdf_icon

HY4N70D

SINGLE FIG.SINGLE CURVE FIG. 2 NON- T1 FORWARD CURRENT AMBIENT 1 2MAXIMUM5 10 1 25 50 PHASE HALF WAVE 60Hz ( ) 150 175 0.00 0.2 0.4 0.6 4 TEMPERATURE DERATING 100 75 10 20 100 125 HY4N70D / HY4N70M 700V / 4A 700V, RDS(ON)=2.8W@VGS=10V, ID=2A N-Channel Enhancement Mode MOSFET Features TO-252 TO-251 Low On-State Resistance Fast Switching Low Gate Cha... See More ⇒

 8.1. Size:145K  hy
 hy4n70t.pdf pdf_icon

HY4N70D

HY4N70T / HY4N70FT 700V / 4A 700V, RDS(ON)=2.8W@VGS=10V, ID=2A N-Channel Enhancement Mode MOSFET Features TO-220AB ITO-220AB Low On-State Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS In compliance with EU RoHs 2002/95/EC Directives 1 1 ... See More ⇒

Detailed specifications: HY2N65T, HY2N70D, HY2N70T, HY3N80T, HY4N60D, HY4N60T, HY4N65D, HY4N65T, IRF730, HY4N70T, HY5N50T, HY6N60D, HY6N60T, HY75N075T, HY75N10T, HY7N80T, HY80N075T

Keywords - HY4N70D MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.