All MOSFET. HY4N70D Datasheet

 

HY4N70D Datasheet and Replacement


   Type Designator: HY4N70D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 56.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 36.8 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
   Package: TO-252
 

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HY4N70D Datasheet (PDF)

 ..1. Size:167K  hy
 hy4n70d.pdf pdf_icon

HY4N70D

SINGLEFIG.SINGLE CURVE FIG. 2 NON-T1 FORWARD CURRENTAMBIENT1 2MAXIMUM5 101 25 50 PHASE HALF WAVE 60Hz () 150 175 0.00 0.2 0.4 0.6 4 TEMPERATURE DERATING 100 75 10 20 100 125HY4N70D / HY4N70M 700V / 4A700V, RDS(ON)=2.8W@VGS=10V, ID=2AN-Channel Enhancement Mode MOSFETFeaturesTO-252 TO-251 Low On-State Resistance Fast Switching Low Gate Cha

 8.1. Size:145K  hy
 hy4n70t.pdf pdf_icon

HY4N70D

HY4N70T / HY4N70FT 700V / 4A700V, RDS(ON)=2.8W@VGS=10V, ID=2AN-Channel Enhancement Mode MOSFETFeaturesTO-220AB ITO-220AB Low On-State Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS In compliance with EU RoHs 2002/95/EC Directives 1 1

Datasheet: HY2N65T , HY2N70D , HY2N70T , HY3N80T , HY4N60D , HY4N60T , HY4N65D , HY4N65T , BS170 , HY4N70T , HY5N50T , HY6N60D , HY6N60T , HY75N075T , HY75N10T , HY7N80T , HY80N075T .

History: 2SK1215F | TPB50R250C

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