HY5N50T PDF and Equivalents Search

 

HY5N50T Specs and Replacement

Type Designator: HY5N50T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 71 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36.2 nS

Cossⓘ - Output Capacitance: 76 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO-220AB

HY5N50T substitution

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HY5N50T datasheet

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HY5N50T

HY5N50T / HY5N50FT 500V / 5A 500V, RDS(ON)=1.5W@VGS=10V, ID=2.5A N-Channel Enhancement Mode MOSFET Features TO-220AB ITO-220AB Low On-State Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS In compliance with EU RoHs 2002/95/EC Directives 1 ... See More ⇒

Detailed specifications: HY2N70T , HY3N80T , HY4N60D , HY4N60T , HY4N65D , HY4N65T , HY4N70D , HY4N70T , IRF3205 , HY6N60D , HY6N60T , HY75N075T , HY75N10T , HY7N80T , HY80N075T , HY80N07T , HY8N50T .

History: IXFN55N50F

Keywords - HY5N50T MOSFET specs

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