All MOSFET. HY5N50T Datasheet

 

HY5N50T Datasheet and Replacement


   Type Designator: HY5N50T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 71 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 36.2 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO-220AB
 

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HY5N50T Datasheet (PDF)

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HY5N50T

HY5N50T / HY5N50FT 500V / 5A500V, RDS(ON)=1.5W@VGS=10V, ID=2.5AN-Channel Enhancement Mode MOSFETFeaturesTO-220AB ITO-220AB Low On-State Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS In compliance with EU RoHs 2002/95/EC Directives 1

Datasheet: HY2N70T , HY3N80T , HY4N60D , HY4N60T , HY4N65D , HY4N65T , HY4N70D , HY4N70T , IRF3205 , HY6N60D , HY6N60T , HY75N075T , HY75N10T , HY7N80T , HY80N075T , HY80N07T , HY8N50T .

History: IRF1010A

Keywords - HY5N50T MOSFET datasheet

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