All MOSFET. HY6N60T Datasheet

 

HY6N60T Datasheet and Replacement


   Type Designator: HY6N60T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 86 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18.8 nS
   Cossⓘ - Output Capacitance: 92 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: TO-220AB
 

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HY6N60T Datasheet (PDF)

 ..1. Size:106K  hy
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HY6N60T

HY6N60T / HY6N60FT600V / 6.0A600V, RDS(ON)=1.8@VGS=10V, ID=3.0AN-Channel Enhancement Mode MOSFETFeatures Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS112 2 In compliance with EU RoHs 2002/95/EC Directives G G33DDS

 8.1. Size:185K  hy
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HY6N60T

HY6N60D / HY6N60M600V / 6.0A600V, RDS(ON)=1.8@VGS=10V, ID=3.0AN-Channel Enhancement Mode MOSFETFeatures Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS21 1D G 2 In compliance with EU RoHs 2002/95/EC Directives G3DS3SMec

Datasheet: HY4N60D , HY4N60T , HY4N65D , HY4N65T , HY4N70D , HY4N70T , HY5N50T , HY6N60D , IRF840 , HY75N075T , HY75N10T , HY7N80T , HY80N075T , HY80N07T , HY8N50T , HY8N65T , HY8N70T .

History: UT100N03-Q | AONR36328 | BSZ018N04LS6 | AONV420A70 | AONP38324U | FDM606P | AP20T15GM-HF

Keywords - HY6N60T MOSFET datasheet

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