All MOSFET. HY80N075T Datasheet

 

HY80N075T Datasheet and Replacement


   Type Designator: HY80N075T
   Marking Code: 80N075T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 92 nC
   trⓘ - Rise Time: 18.2 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO-220AB
      - MOSFET Cross-Reference Search

 

HY80N075T Datasheet (PDF)

 ..1. Size:216K  hy
 hy80n075t.pdf pdf_icon

HY80N075T

HY80N075T 75V / 80A75V, RDS(ON)=8.0mW@VGS=10V, ID=40AN-Channel Enhancement Mode MOSFETFeaturesTO-220AB Low On-State Resistance Excellent Gate Charge x RDS(ON) Product ( FOM ) Fully Characterized Avalanche Voltage and Current Specially Desigened for DC-DC Converter, Off-line UPS, Automotive System, Solenoid and Motor ControlDrain In compliance with EU Ro

 7.1. Size:222K  hy
 hy80n07t.pdf pdf_icon

HY80N075T

SINGLE FIG.SINGLE PHASE HALF WAVE 60Hz DERATING CURVE FIG. 2 MAXIMUM NON-T1 FORWARD CURRENT AMBIENT TEMPERATURE () 1 2 5 10 1 25 50 75 10 20 150 175 0.00 0.2 0.4 0.6 4 100 125 100 HY80N07T 65V / 80A65V, RDS(ON)=7.2mW@VGS=10V, ID=30AN-Channel Enhancement Mode MOSFETFeaturesTO-220AB Low On-State Resistance Excellent Gate Charge x RDS(ON) Product ( F

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRFP21N60L | NCE2321A

Keywords - HY80N075T MOSFET datasheet

 HY80N075T cross reference
 HY80N075T equivalent finder
 HY80N075T lookup
 HY80N075T substitution
 HY80N075T replacement

 

 
Back to Top

 


 
.