HY8N50T Specs and Replacement

Type Designator: HY8N50T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28.6 nS

Cossⓘ - Output Capacitance: 145 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO-220AB

HY8N50T substitution

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HY8N50T datasheet

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HY8N50T

HY8N50T / HY8N50FT 500V / 8.0A 500V, RDS(ON)=0.9 @VGS=10V, ID=4.0A N-Channel Enhancement Mode MOSFET Features Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, PFC and SMPS 1 1 2 2 In compliance with EU RoHs 2002/95/EC Directives G G 3 3 D D S S Mechanica... See More ⇒

Detailed specifications: HY5N50T, HY6N60D, HY6N60T, HY75N075T, HY75N10T, HY7N80T, HY80N075T, HY80N07T, IRFZ44, HY8N65T, HY8N70T, RU1088R, RU120N15Q, RU120N15R, RU140N10R, RU16P8M4, RU190N10Q

Keywords - HY8N50T MOSFET specs

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