HY8N65T Specs and Replacement

Type Designator: HY8N65T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18.6 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO-220AB

HY8N65T substitution

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HY8N65T datasheet

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HY8N65T

HY8N65T / HY8N65FT 650V / 8A 650V, RDS(ON)=1.4 @VGS=10V, ID=4.0A N-Channel Enhancement Mode MOSFET Features Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS 1 1 2 2 In compliance with EU RoHs 2002/95/EC Directives G G 3 3 D D S S ... See More ⇒

Detailed specifications: HY6N60D, HY6N60T, HY75N075T, HY75N10T, HY7N80T, HY80N075T, HY80N07T, HY8N50T, IRF640, HY8N70T, RU1088R, RU120N15Q, RU120N15R, RU140N10R, RU16P8M4, RU190N10Q, RU190N10R

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