All MOSFET. HY8N65T Datasheet

 

HY8N65T Datasheet and Replacement


   Type Designator: HY8N65T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18.6 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-220AB
 

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HY8N65T Datasheet (PDF)

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HY8N65T

HY8N65T / HY8N65FT650V / 8A650V, RDS(ON)=1.4@VGS=10V, ID=4.0AN-Channel Enhancement Mode MOSFETFeatures Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS112 2 In compliance with EU RoHs 2002/95/EC Directives G G33DDSS

Datasheet: HY6N60D , HY6N60T , HY75N075T , HY75N10T , HY7N80T , HY80N075T , HY80N07T , HY8N50T , IRFP460 , HY8N70T , RU1088R , RU120N15Q , RU120N15R , RU140N10R , RU16P8M4 , RU190N10Q , RU190N10R .

History: APT20M20LFLL

Keywords - HY8N65T MOSFET datasheet

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