All MOSFET. HY8N70T Datasheet

 

HY8N70T Datasheet and Replacement


   Type Designator: HY8N70T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 42.6 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO-220AB
 

 HY8N70T substitution

   - MOSFET ⓘ Cross-Reference Search

 

HY8N70T Datasheet (PDF)

 ..1. Size:144K  hy
 hy8n70t.pdf pdf_icon

HY8N70T

HY8N70T / HY8N70FT 700V / 8A700V, RDS(ON)=1.2W@VGS=10V, ID=4.0AN-Channel Enhancement Mode MOSFETFeaturesTO-220AB ITO-220AB Low On-State Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS In compliance with EU RoHs 2002/95/EC Directives 1

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: UT40N03 | VS4802GKM | 2SK3636 | 2SK3827 | AP2304GN | 2SK3591 | PK650DY

Keywords - HY8N70T MOSFET datasheet

 HY8N70T cross reference
 HY8N70T equivalent finder
 HY8N70T lookup
 HY8N70T substitution
 HY8N70T replacement

 

 
Back to Top

 


 
.