All MOSFET. RU140N10R Datasheet

 

RU140N10R Datasheet and Replacement


   Type Designator: RU140N10R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 140 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 210 nS
   Cossⓘ - Output Capacitance: 810 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO-220
 

 RU140N10R substitution

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RU140N10R Datasheet (PDF)

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RU140N10R

RU140N10R N-Channel Advanced Power MOSFET Features Pin Description 100V/140A RDS (ON)=6.5m(Typ.) @ VGS=10V Ultra Low On-Resistance Low Gate Charge Fast Switching and Fully Avalanche Rated TO-220 100% avalanche tested Applications Switching applications N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA

Datasheet: HY80N075T , HY80N07T , HY8N50T , HY8N65T , HY8N70T , RU1088R , RU120N15Q , RU120N15R , 10N60 , RU16P8M4 , RU190N10Q , RU190N10R , RU190N10S , RU1C001UN , RU1C001ZP , RU1H100R , RU1H130Q .

History: ET6314 | UPA1764G | BSF083N03LQG | STD5NK50ZT4 | P6015AV | SSF2N60D2 | 6N60KG-TA3-T

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