RU140N10R Specs and Replacement

Type Designator: RU140N10R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 140 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 210 nS

Cossⓘ - Output Capacitance: 810 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO-220

RU140N10R substitution

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RU140N10R datasheet

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RU140N10R

RU140N10R N-Channel Advanced Power MOSFET Features Pin Description 100V/140A RDS (ON)=6.5m (Typ.) @ VGS=10V Ultra Low On-Resistance Low Gate Charge Fast Switching and Fully Avalanche Rated TO-220 100% avalanche tested Applications Switching applications N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA... See More ⇒

Detailed specifications: HY80N075T, HY80N07T, HY8N50T, HY8N65T, HY8N70T, RU1088R, RU120N15Q, RU120N15R, IRFP260N, RU16P8M4, RU190N10Q, RU190N10R, RU190N10S, RU1C001UN, RU1C001ZP, RU1H100R, RU1H130Q

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.