All MOSFET. RU16P8M4 Datasheet

 

RU16P8M4 Datasheet and Replacement


   Type Designator: RU16P8M4
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 16 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SDFN2020
 

 RU16P8M4 substitution

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RU16P8M4 Datasheet (PDF)

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RU16P8M4

RU16P8M4P-Channel Advanced Power MOSFETFeatures Pin Description -16V/-8A, RDS (ON) =40m(Typ.)@VGS=-4.5V RDS (ON) =65m(Typ.)@VGS=-2.5VG Super High Dense Cell DesignS Fast Switching SpeedD Reliable and RuggedSDD Lead Free and Green Devices Available (RoHS Compliant)DDPIN1SDFN2020DApplications Load Swtich Battery ChargeG

Datasheet: HY80N07T , HY8N50T , HY8N65T , HY8N70T , RU1088R , RU120N15Q , RU120N15R , RU140N10R , IRF3710 , RU190N10Q , RU190N10R , RU190N10S , RU1C001UN , RU1C001ZP , RU1H100R , RU1H130Q , RU1H130R .

History: 2SJ319S | SSM3K318T | TPCC8062-H | 2SK2545 | NX7002AKW | FTP02N65B | UPA1760G

Keywords - RU16P8M4 MOSFET datasheet

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