RU16P8M4 Specs and Replacement
Type Designator: RU16P8M4
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 16 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 90 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: SDFN2020
RU16P8M4 substitution
- MOSFET ⓘ Cross-Reference Search
RU16P8M4 datasheet
ru16p8m4.pdf
RU16P8M4 P-Channel Advanced Power MOSFET Features Pin Description -16V/-8A, RDS (ON) =40m (Typ.)@VGS=-4.5V RDS (ON) =65m (Typ.)@VGS=-2.5V G Super High Dense Cell Design S Fast Switching Speed D Reliable and Rugged S D D Lead Free and Green Devices Available (RoHS Compliant) D D PIN1 SDFN2020 D Applications Load Swtich Battery Charge G ... See More ⇒
Detailed specifications: HY80N07T, HY8N50T, HY8N65T, HY8N70T, RU1088R, RU120N15Q, RU120N15R, RU140N10R, AO3400, RU190N10Q, RU190N10R, RU190N10S, RU1C001UN, RU1C001ZP, RU1H100R, RU1H130Q, RU1H130R
Keywords - RU16P8M4 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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