RU1H35L Specs and Replacement

Type Designator: RU1H35L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 97 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 76 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: TO-252

RU1H35L substitution

- MOSFET ⓘ Cross-Reference Search

 

RU1H35L datasheet

 ..1. Size:284K  ruichips
ru1h35l.pdf pdf_icon

RU1H35L

RU1H35L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 100V/40A, RDS (ON) =21m (Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) TO-252 Applications High Speed Power Switching N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25 C... See More ⇒

 8.1. Size:287K  ruichips
ru1h35q.pdf pdf_icon

RU1H35L

RU1H35Q N-Channel Advanced Power MOSFET MOSFET Features Pin Description 100V/40A, RDS (ON) =21m (Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) TO-247 Applications Switching application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25 C Unles... See More ⇒

 8.2. Size:298K  ruichips
ru1h35r.pdf pdf_icon

RU1H35L

RU1H35R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 100V/40A, RDS (ON) =21m (Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) TO-220 Applications Switching application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25 C Unles... See More ⇒

 8.3. Size:290K  ruichips
ru1h35s.pdf pdf_icon

RU1H35L

RU1H35S N-Channel Advanced Power MOSFET MOSFET Features Pin Description 100V/40A, RDS (ON) =21m (Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) TO-263 Applications Switching application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25 C Unles... See More ⇒

Detailed specifications: RU1H100R, RU1H130Q, RU1H130R, RU1H130S, RU1H190R, RU1H190S, RU1H300Q, RU1H35K, 2SK3878, RU1H35Q, RU1H35R, RU1H35S, RU1H36L, RU1H36R, RU1H36S, RU1H40L, RU1H60R

Keywords - RU1H35L MOSFET specs

 RU1H35L cross reference

 RU1H35L equivalent finder

 RU1H35L pdf lookup

 RU1H35L substitution

 RU1H35L replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility