RU1H40L Specs and Replacement

Type Designator: RU1H40L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 97 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: TO-252

RU1H40L substitution

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RU1H40L datasheet

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RU1H40L

RU1H40L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 100V/40A, RDS (ON) =22m (Typ.)@VGS=10V RDS (ON) =28m (Typ.)@VGS=4.5V Super High Dense Cell Design Fast Switching and Fully Avalanche Rated Reliable and Rugged TO252 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Applications High Speed Power Switchin... See More ⇒

Detailed specifications: RU1H35K, RU1H35L, RU1H35Q, RU1H35R, RU1H35S, RU1H36L, RU1H36R, RU1H36S, K3569, RU1H60R, RU1H7H, RU1H80R, RU1HC2H, RU1HE12L, RU1HE16L, RU1HE3D, RU1HE3H

Keywords - RU1H40L MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs