All MOSFET. RU1H40L Datasheet

 

RU1H40L Datasheet and Replacement


   Type Designator: RU1H40L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 97 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO-252
 

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RU1H40L Datasheet (PDF)

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RU1H40L

RU1H40LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/40A,RDS (ON) =22m(Typ.)@VGS=10VRDS (ON) =28m(Typ.)@VGS=4.5V Super High Dense Cell Design Fast Switching and Fully Avalanche Rated Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications High Speed Power Switchin

Datasheet: RU1H35K , RU1H35L , RU1H35Q , RU1H35R , RU1H35S , RU1H36L , RU1H36R , RU1H36S , SPP20N60C3 , RU1H60R , RU1H7H , RU1H80R , RU1HC2H , RU1HE12L , RU1HE16L , RU1HE3D , RU1HE3H .

History: IPA60R380P6 | RTF015N03TL | KQB9N50 | UTT220N03 | UTT30N06

Keywords - RU1H40L MOSFET datasheet

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