All MOSFET. RU1H60R Datasheet

 

RU1H60R Datasheet and Replacement


   Type Designator: RU1H60R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 760 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO-220
 

 RU1H60R substitution

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RU1H60R Datasheet (PDF)

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RU1H60R

RU1H60R N-Channel Advanced Power MOSFET Features Pin Description 100V/60A, RDS (ON) =17 m(Typ.)@VGS=10V RDS (ON) =18.5 m(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications Switching Applications N-Channel MOSFET Absolute M

Datasheet: RU1H35L , RU1H35Q , RU1H35R , RU1H35S , RU1H36L , RU1H36R , RU1H36S , RU1H40L , 8205A , RU1H7H , RU1H80R , RU1HC2H , RU1HE12L , RU1HE16L , RU1HE3D , RU1HE3H , RU1HE4D .

History: RU1H40L | IPA60R380P6 | RTF015N03TL | UTT220N03 | UTT30N06 | KQB9N50

Keywords - RU1H60R MOSFET datasheet

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