RU1H60R Specs and Replacement

Type Designator: RU1H60R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 760 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TO-220

RU1H60R substitution

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RU1H60R datasheet

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RU1H60R

RU1H60R N-Channel Advanced Power MOSFET Features Pin Description 100V/60A, RDS (ON) =17 m (Typ.)@VGS=10V RDS (ON) =18.5 m (Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications Switching Applications N-Channel MOSFET Absolute M... See More ⇒

Detailed specifications: RU1H35L, RU1H35Q, RU1H35R, RU1H35S, RU1H36L, RU1H36R, RU1H36S, RU1H40L, IRFP260, RU1H7H, RU1H80R, RU1HC2H, RU1HE12L, RU1HE16L, RU1HE3D, RU1HE3H, RU1HE4D

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