All MOSFET. RU1H7H Datasheet

 

RU1H7H Datasheet and Replacement


   Type Designator: RU1H7H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 76 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SOP-8
 

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RU1H7H Datasheet (PDF)

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RU1H7H

RU1H7HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/6A,RDS (ON) =40m (Typ.) @ VGS=10V Super High Dense Cell Design Reliable and Rugged Lead Free and Green AvailableSOP-8Applications SMPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA=25C Unless Otherwise Noted)100VDSSDrain-Source

Datasheet: RU1H35Q , RU1H35R , RU1H35S , RU1H36L , RU1H36R , RU1H36S , RU1H40L , RU1H60R , 2SK3568 , RU1H80R , RU1HC2H , RU1HE12L , RU1HE16L , RU1HE3D , RU1HE3H , RU1HE4D , RU1HE4H .

History: BUK6D38-30E | UF3205G-TQ2-R

Keywords - RU1H7H MOSFET datasheet

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