All MOSFET. RU1H7H Datasheet

 

RU1H7H MOSFET. Datasheet pdf. Equivalent


   Type Designator: RU1H7H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 44 nC
   trⓘ - Rise Time: 76 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SOP-8

 RU1H7H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RU1H7H Datasheet (PDF)

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 ru1h7h.pdf

RU1H7H RU1H7H

RU1H7HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/6A,RDS (ON) =40m (Typ.) @ VGS=10V Super High Dense Cell Design Reliable and Rugged Lead Free and Green AvailableSOP-8Applications SMPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA=25C Unless Otherwise Noted)100VDSSDrain-Source

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: 2SK1132 | PSMN4R5-40BS

 

 
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