All MOSFET. RU1H7H Datasheet

 

RU1H7H Datasheet and Replacement


   Type Designator: RU1H7H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 76 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SOP-8
 

 RU1H7H substitution

   - MOSFET ⓘ Cross-Reference Search

 

RU1H7H Datasheet (PDF)

 ..1. Size:265K  ruichips
 ru1h7h.pdf pdf_icon

RU1H7H

RU1H7HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/6A,RDS (ON) =40m (Typ.) @ VGS=10V Super High Dense Cell Design Reliable and Rugged Lead Free and Green AvailableSOP-8Applications SMPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA=25C Unless Otherwise Noted)100VDSSDrain-Source

Datasheet: RU1H35Q , RU1H35R , RU1H35S , RU1H36L , RU1H36R , RU1H36S , RU1H40L , RU1H60R , 2SK3568 , RU1H80R , RU1HC2H , RU1HE12L , RU1HE16L , RU1HE3D , RU1HE3H , RU1HE4D , RU1HE4H .

History: NCE0224AF | AO4821 | HGN024N06SL | BUK9535-100A | TSJ10N10AT | CTLDM8120-M621H | RTR040N03TL

Keywords - RU1H7H MOSFET datasheet

 RU1H7H cross reference
 RU1H7H equivalent finder
 RU1H7H lookup
 RU1H7H substitution
 RU1H7H replacement

 

 
Back to Top

 


 
.