RU1H7H Specs and Replacement

Type Designator: RU1H7H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 76 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: SOP-8

RU1H7H substitution

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RU1H7H datasheet

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RU1H7H

RU1H7H N-Channel Advanced Power MOSFET MOSFET Features Pin Description 100V/6A, RDS (ON) =40m (Typ.) @ VGS=10V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Available SOP-8 Applications SMPS N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25 C Unless Otherwise Noted) 100 VDSS Drain-Source... See More ⇒

Detailed specifications: RU1H35Q, RU1H35R, RU1H35S, RU1H36L, RU1H36R, RU1H36S, RU1H40L, RU1H60R, 4435, RU1H80R, RU1HC2H, RU1HE12L, RU1HE16L, RU1HE3D, RU1HE3H, RU1HE4D, RU1HE4H

Keywords - RU1H7H MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.