RU1H80R Specs and Replacement

Type Designator: RU1H80R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 188 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 470 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO-220

RU1H80R substitution

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RU1H80R datasheet

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RU1H80R

RU1H80R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 100V/80A, RDS (ON) =9m (Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated TO-220 100% avalanche tested 175 C Operating Temperature Lead Free and Green Available Applications High Current Switching Applications N-Ch... See More ⇒

Detailed specifications: RU1H35R, RU1H35S, RU1H36L, RU1H36R, RU1H36S, RU1H40L, RU1H60R, RU1H7H, SPP20N60C3, RU1HC2H, RU1HE12L, RU1HE16L, RU1HE3D, RU1HE3H, RU1HE4D, RU1HE4H, RU1HL13K

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.