All MOSFET. RU1H80R Datasheet

 

RU1H80R Datasheet and Replacement


   Type Designator: RU1H80R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 188 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO-220
 

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RU1H80R Datasheet (PDF)

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RU1H80R

RU1H80RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/80A,RDS (ON) =9m (Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche RatedTO-220 100% avalanche tested 175C Operating Temperature Lead Free and Green AvailableApplications High Current Switching ApplicationsN-Ch

Datasheet: RU1H35R , RU1H35S , RU1H36L , RU1H36R , RU1H36S , RU1H40L , RU1H60R , RU1H7H , AON7410 , RU1HC2H , RU1HE12L , RU1HE16L , RU1HE3D , RU1HE3H , RU1HE4D , RU1HE4H , RU1HL13K .

History: 4N70L-TF1-T | IPA65R065C7

Keywords - RU1H80R MOSFET datasheet

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