RU1HC2H Specs and Replacement
Type Designator: RU1HC2H
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 134 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: SOP-8
RU1HC2H substitution
- MOSFET ⓘ Cross-Reference Search
RU1HC2H datasheet
ru1hc2h.pdf
RU1HC2H Complementary Advanced Power MOSFET MOSFET Features Pin Description N-Channel 100V/3.5A, RDS (ON) =75m (Typ.) @ VGS=10V RDS (ON) =80m (Typ.) @ VGS=4.5V P-Channel -100V/-2.5A, RDS (ON) =155m (Typ.) @ VGS=-10V RDS (ON) =175m (Typ.) @ VGS=-4.5V SOP-8 Reliable and Rugged ESD Protected Lead Free and Green Available Applications Power Manag... See More ⇒
Detailed specifications: RU1H35S , RU1H36L , RU1H36R , RU1H36S , RU1H40L , RU1H60R , RU1H7H , RU1H80R , SKD502T , RU1HE12L , RU1HE16L , RU1HE3D , RU1HE3H , RU1HE4D , RU1HE4H , RU1HL13K , RU1HL13L .
Keywords - RU1HC2H MOSFET specs
RU1HC2H cross reference
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RU1HC2H substitution
RU1HC2H replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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