RU1HC2H Datasheet and Replacement
Type Designator: RU1HC2H
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 134 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: SOP-8
RU1HC2H substitution
RU1HC2H Datasheet (PDF)
ru1hc2h.pdf
RU1HC2HComplementary Advanced Power MOSFETMOSFETFeatures Pin Description N-Channel100V/3.5A,RDS (ON) =75m (Typ.) @ VGS=10VRDS (ON) =80m (Typ.) @ VGS=4.5V P-Channel-100V/-2.5A,RDS (ON) =155m (Typ.) @ VGS=-10VRDS (ON) =175m (Typ.) @ VGS=-4.5VSOP-8 Reliable and Rugged ESD Protected Lead Free and Green AvailableApplications Power Manag
Datasheet: RU1H35S , RU1H36L , RU1H36R , RU1H36S , RU1H40L , RU1H60R , RU1H7H , RU1H80R , SPP20N60C3 , RU1HE12L , RU1HE16L , RU1HE3D , RU1HE3H , RU1HE4D , RU1HE4H , RU1HL13K , RU1HL13L .
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