RU1HP55R Specs and Replacement

Type Designator: RU1HP55R

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 176 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 87 nS

Cossⓘ - Output Capacitance: 535 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TO-220

RU1HP55R substitution

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RU1HP55R datasheet

 ..1. Size:329K  ruichips
 ru1hp55r.pdf pdf_icon

RU1HP55R

RU1HP55R P-Channel Advanced Power MOSFET Features Pin Description -100V/-55A, RDS (ON) =30m (Typ.)@VGS=-10V Low On-Resistance Super High Dense Cell Design Fast Switching and Fully Avalanche Rated 100% avalanche tested 175 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) G D S TO220 D Applications Inverters G S P... See More ⇒

 9.1. Size:330K  ruichips
 ru1hp60r.pdf pdf_icon

RU1HP55R

RU1HP60R P-Channel Advanced Power MOSFET Features Pin Description -100V/-60A, RDS (ON) =18m (Typ.)@VGS=-10V Low On-Resistance Super High Dense Cell Design Fast Switching and Fully Avalanche Rated 100% avalanche tested 175 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) G D S TO220 D Applications Inverters G S P... See More ⇒

Detailed specifications: RU1HE3D, RU1HE3H, RU1HE4D, RU1HE4H, RU1HL13K, RU1HL13L, RU1HL13R, RU1HL8L, NCEP15T14, RU1HP60R, RU1J002YN, RU1Z120R, RU1Z200Q, RU20120L, RU20130L, RU2013H, RU2020H

Keywords - RU1HP55R MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.