RU1HP60R Specs and Replacement

Type Designator: RU1HP60R

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 188 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 83 nS

Cossⓘ - Output Capacitance: 615 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: TO-220

RU1HP60R substitution

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RU1HP60R datasheet

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RU1HP60R

RU1HP60R P-Channel Advanced Power MOSFET Features Pin Description -100V/-60A, RDS (ON) =18m (Typ.)@VGS=-10V Low On-Resistance Super High Dense Cell Design Fast Switching and Fully Avalanche Rated 100% avalanche tested 175 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) G D S TO220 D Applications Inverters G S P... See More ⇒

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 ru1hp55r.pdf pdf_icon

RU1HP60R

RU1HP55R P-Channel Advanced Power MOSFET Features Pin Description -100V/-55A, RDS (ON) =30m (Typ.)@VGS=-10V Low On-Resistance Super High Dense Cell Design Fast Switching and Fully Avalanche Rated 100% avalanche tested 175 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) G D S TO220 D Applications Inverters G S P... See More ⇒

Detailed specifications: RU1HE3H, RU1HE4D, RU1HE4H, RU1HL13K, RU1HL13L, RU1HL13R, RU1HL8L, RU1HP55R, AON7506, RU1J002YN, RU1Z120R, RU1Z200Q, RU20120L, RU20130L, RU2013H, RU2020H, RU2021H

Keywords - RU1HP60R MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs