All MOSFET. RU1HP60R Datasheet

 

RU1HP60R Datasheet and Replacement


   Type Designator: RU1HP60R
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 188 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 83 nS
   Cossⓘ - Output Capacitance: 615 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO-220
 

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RU1HP60R Datasheet (PDF)

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RU1HP60R

RU1HP60RP-Channel Advanced Power MOSFETFeatures Pin Description -100V/-60A, RDS (ON) =18m(Typ.)@VGS=-10V Low On-Resistance Super High Dense Cell Design Fast Switching and Fully Avalanche Rated 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GDSTO220DApplicationsInvertersGSP

 9.1. Size:329K  ruichips
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RU1HP60R

RU1HP55RP-Channel Advanced Power MOSFETFeatures Pin Description -100V/-55A, RDS (ON) =30m(Typ.)@VGS=-10V Low On-Resistance Super High Dense Cell Design Fast Switching and Fully Avalanche Rated 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GDSTO220DApplicationsInvertersGSP

Datasheet: RU1HE3H , RU1HE4D , RU1HE4H , RU1HL13K , RU1HL13L , RU1HL13R , RU1HL8L , RU1HP55R , 2N7002 , RU1J002YN , RU1Z120R , RU1Z200Q , RU20120L , RU20130L , RU2013H , RU2020H , RU2021H .

History: SWP068R08ET | STP3NK80Z

Keywords - RU1HP60R MOSFET datasheet

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