All MOSFET. RU1J002YN Datasheet

 

RU1J002YN Datasheet and Replacement


   Type Designator: RU1J002YN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 6 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: UMT3F
 

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RU1J002YN Datasheet (PDF)

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RU1J002YN

RU1J002YN Nch 50V 200mA Small Signal MOSFET DatasheetlOutlineVDSS50V(3) UMT3FRDS(on) (Max.)2.2WID (1) 200mA(2) PD150mWlFeatures lInner circuit1) Low voltage drive(0.9V) makes this(1) Gate device ideal for partable equipment.(2) Source 2) Drive circuits can be simple.(3) Drain 3) Built-in G-S Protection Diode.*1 BODY DIODE *2 ESD PROTECTION DIODE

Datasheet: RU1HE4D , RU1HE4H , RU1HL13K , RU1HL13L , RU1HL13R , RU1HL8L , RU1HP55R , RU1HP60R , 20N50 , RU1Z120R , RU1Z200Q , RU20120L , RU20130L , RU2013H , RU2020H , RU2021H , RU205B .

History: NVMTS0D6N04C

Keywords - RU1J002YN MOSFET datasheet

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