RU1J002YN Specs and Replacement

Type Designator: RU1J002YN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm

Package: UMT3F

RU1J002YN substitution

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RU1J002YN datasheet

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RU1J002YN

RU1J002YN Nch 50V 200mA Small Signal MOSFET Datasheet lOutline VDSS 50V (3) UMT3F RDS(on) (Max.) 2.2W ID (1) 200mA (2) PD 150mW lFeatures lInner circuit 1) Low voltage drive(0.9V) makes this (1) Gate device ideal for partable equipment. (2) Source 2) Drive circuits can be simple. (3) Drain 3) Built-in G-S Protection Diode. *1 BODY DIODE *2 ESD PROTECTION DIODE ... See More ⇒

Detailed specifications: RU1HE4D, RU1HE4H, RU1HL13K, RU1HL13L, RU1HL13R, RU1HL8L, RU1HP55R, RU1HP60R, STP80NF70, RU1Z120R, RU1Z200Q, RU20120L, RU20130L, RU2013H, RU2020H, RU2021H, RU205B

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