RU1J002YN MOSFET. Datasheet pdf. Equivalent
Type Designator: RU1J002YN
Marking Code: QJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.8 V
|Id|ⓘ - Maximum Drain Current: 0.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 6 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
Package: UMT3F
RU1J002YN Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RU1J002YN Datasheet (PDF)
ru1j002yn.pdf
RU1J002YN Nch 50V 200mA Small Signal MOSFET DatasheetlOutlineVDSS50V(3) UMT3FRDS(on) (Max.)2.2WID (1) 200mA(2) PD150mWlFeatures lInner circuit1) Low voltage drive(0.9V) makes this(1) Gate device ideal for partable equipment.(2) Source 2) Drive circuits can be simple.(3) Drain 3) Built-in G-S Protection Diode.*1 BODY DIODE *2 ESD PROTECTION DIODE
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F