All MOSFET. RU1Z120R Datasheet

 

RU1Z120R Datasheet and Replacement


   Type Designator: RU1Z120R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 98 nS
   Cossⓘ - Output Capacitance: 1010 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO-220
 

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RU1Z120R Datasheet (PDF)

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RU1Z120R

RU1Z120RN-Channel Advanced Power MOSFETFeatures Pin Description 150V/120A, RDS (ON) =11m(Typ.)@VGS=10V Reliable and Rugged 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) Lead Free and Green Devices Available (RoHS Compliant)GDSApplicationsTO220 High Speed Power SwitchingDDDD

Datasheet: RU1HE4H , RU1HL13K , RU1HL13L , RU1HL13R , RU1HL8L , RU1HP55R , RU1HP60R , RU1J002YN , IRF1407 , RU1Z200Q , RU20120L , RU20130L , RU2013H , RU2020H , RU2021H , RU205B , RU206G .

History: PDN2309S | NCE60N1K0I | AP4543GEH-HF | TSM75N75CZ | AOE6932

Keywords - RU1Z120R MOSFET datasheet

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