All MOSFET. RU1Z120R Datasheet

 

RU1Z120R MOSFET. Datasheet pdf. Equivalent


   Type Designator: RU1Z120R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 95 nC
   trⓘ - Rise Time: 98 nS
   Cossⓘ - Output Capacitance: 1010 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO-220

 RU1Z120R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RU1Z120R Datasheet (PDF)

 ..1. Size:447K  ruichips
 ru1z120r.pdf

RU1Z120R RU1Z120R

RU1Z120RN-Channel Advanced Power MOSFETFeatures Pin Description 150V/120A, RDS (ON) =11m(Typ.)@VGS=10V Reliable and Rugged 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) Lead Free and Green Devices Available (RoHS Compliant)GDSApplicationsTO220 High Speed Power SwitchingDDDD

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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