RU1Z200Q MOSFET. Datasheet pdf. Equivalent
Type Designator: RU1Z200Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 600 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 200 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 90 nC
trⓘ - Rise Time: 205 nS
Cossⓘ - Output Capacitance: 1420 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO-247
RU1Z200Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RU1Z200Q Datasheet (PDF)
..1. Size:381K ruichips
ru1z200q.pdf
ru1z200q.pdf
RU1Z200QN-Channel Advanced Power MOSFETFeatures Pin Description 150V/200A, RDS (ON) =5.5m(Typ.)@VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GDSTO247DD
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
