All MOSFET. RU1Z200Q Datasheet

 

RU1Z200Q Datasheet and Replacement


   Type Designator: RU1Z200Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 600 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 200 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 205 nS
   Cossⓘ - Output Capacitance: 1420 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO-247
 

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RU1Z200Q Datasheet (PDF)

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RU1Z200Q

RU1Z200QN-Channel Advanced Power MOSFETFeatures Pin Description 150V/200A, RDS (ON) =5.5m(Typ.)@VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GDSTO247DD

Datasheet: RU1HL13K , RU1HL13L , RU1HL13R , RU1HL8L , RU1HP55R , RU1HP60R , RU1J002YN , RU1Z120R , IRFZ24N , RU20120L , RU20130L , RU2013H , RU2020H , RU2021H , RU205B , RU206G , RU2090M .

History: P5010AV | STP4NK60ZFP | BL4N80A-U | CJP85N80 | NP84N04EHE | SM32314D1RL | NCE0157A

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