RU1Z200Q Specs and Replacement

Type Designator: RU1Z200Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 600 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 200 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 205 nS

Cossⓘ - Output Capacitance: 1420 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: TO-247

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RU1Z200Q datasheet

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RU1Z200Q

RU1Z200Q N-Channel Advanced Power MOSFET Features Pin Description 150V/200A, RDS (ON) =5.5m (Typ.)@VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested 100% avalanche tested 175 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) G D S TO247 D D ... See More ⇒

Detailed specifications: RU1HL13K, RU1HL13L, RU1HL13R, RU1HL8L, RU1HP55R, RU1HP60R, RU1J002YN, RU1Z120R, TK10A60D, RU20120L, RU20130L, RU2013H, RU2020H, RU2021H, RU205B, RU206G, RU2090M

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.