RU2020H Specs and Replacement

Type Designator: RU2020H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 1530 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm

Package: SOP-8

RU2020H substitution

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RU2020H datasheet

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RU2020H

RU2020H N-Channel Advanced Power MOSFET MOSFET Features Pin Description 20V/20A, RDS (ON) =3.5m (Typ.) @ VGS=10V RDS (ON) =3.8m (Typ.) @ VGS=4.5V RDS (ON) =5.6m (Typ.) @ VGS=2.5V Super High Dense Cell Design Low RDS(ON) Reliable and Rugged SOP-8 Lead Free and Green Available Applications DC/DC Converter N-Channel MOSFET Absolute Maximum Ratings ... See More ⇒

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RU2020H

RU2021H N-Channel Advanced Power MOSFET MOSFET Features Pin Description 20V/20A, RDS (ON) =4m (Typ.) @ VGS=10V RDS (ON) =5m (Typ.) @ VGS=4.5V Super High Dense Cell Design Low RDS(ON) Reliable and Rugged SOP-8 Lead Free and Green Available Applications DC/DC Converter N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Rat... See More ⇒

Detailed specifications: RU1HP55R, RU1HP60R, RU1J002YN, RU1Z120R, RU1Z200Q, RU20120L, RU20130L, RU2013H, IRFP250, RU2021H, RU205B, RU206G, RU2090M, RU20D10H, RU20E60L, RU20E8H, RU20P18L

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.