RU2090M MOSFET. Datasheet pdf. Equivalent
Type Designator: RU2090M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 4.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 26 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 37 nS
Cossⓘ - Output Capacitance: 820 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: PDFN5060
RU2090M Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RU2090M Datasheet (PDF)
..1. Size:307K ruichips
ru2090m.pdf
ru2090m.pdf
RU2090M N-Channel Advanced Power MOSFET Features Pin Description 20V/99A, RDS (ON) =2.3m(Typ.)@VGS=10V RDS (ON) =4m(Typ.)@VGS=4.5V Super High Dense Cell Design Reliable and Rugged 100% avalanche tested PDFN5060 Lead Free and Green Devices Available (RoHS Compliant) Applications Rectification Switching Application N-Channel MOSFET
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
