All MOSFET. RU20D10H Datasheet

 

RU20D10H Datasheet and Replacement


   Type Designator: RU20D10H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 124 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: SOP-8
 

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RU20D10H Datasheet (PDF)

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RU20D10H

RU20D10HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 20V/10A,RDS (ON) =13m (Typ.) @ VGS=10VRDS (ON) =16m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green AvailableSOP-8Applications SMPSDual N-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA=25C Unles

Datasheet: RU20120L , RU20130L , RU2013H , RU2020H , RU2021H , RU205B , RU206G , RU2090M , IRF2807 , RU20E60L , RU20E8H , RU20P18L , RU20P2B , RU20P3B , RU20P4C , RU20P5E , RU20T7G .

History: HY1607M | AFP2319AS | RSR020N06TL

Keywords - RU20D10H MOSFET datasheet

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