RU20D10H Specs and Replacement

Type Designator: RU20D10H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 124 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: SOP-8

RU20D10H substitution

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RU20D10H datasheet

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RU20D10H

RU20D10H N-Channel Advanced Power MOSFET MOSFET Features Pin Description 20V/10A, RDS (ON) =13m (Typ.) @ VGS=10V RDS (ON) =16m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Available SOP-8 Applications SMPS Dual N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25 C Unles... See More ⇒

Detailed specifications: RU20120L, RU20130L, RU2013H, RU2020H, RU2021H, RU205B, RU206G, RU2090M, RFP50N06, RU20E60L, RU20E8H, RU20P18L, RU20P2B, RU20P3B, RU20P4C, RU20P5E, RU20T7G

Keywords - RU20D10H MOSFET specs

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