RU20T8M7 Specs and Replacement
Type Designator: RU20T8M7
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 180 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: SDFN2050
RU20T8M7 substitution
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RU20T8M7 datasheet
ru20t8m7.pdf
RU20T8M7 N-Channel Advanced Power MOSFET Features Pin Description 20V/8A, G2 S2 RDS (ON) =13m (Typ.)@VGS=4.5V S2 RDS (ON) =14m (Typ.)@VGS=4V RDS (ON) =16m (Typ.)@VGS=3.1V RDS (ON) =18m (Typ.)@VGS=2.5V D1/D2 Super High Dense Cell Design Fast Switching Speed ESD Protected G1 S1S1 PIN1 100% avalanche tested PIN1 Lead Free and Green Devices Availab... See More ⇒
ru20t7g.pdf
RU20T7G N-Channel Advanced Power MOSFET MOSFET Features Pin Description 20V/7A, RDS (ON) =12m (Typ.) @ VGS=4.5V RDS (ON) =18m (Typ.) @ VGS=2.5V Super High Dense Cell Design Reliable and Rugged TSSOP-8 ESD Protected Lead Free and Green Available Applications PWM Applications Dual N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit... See More ⇒
Detailed specifications: RU20E60L, RU20E8H, RU20P18L, RU20P2B, RU20P3B, RU20P4C, RU20P5E, RU20T7G, 2N60, RU2520H, RU2560L, RU2568L, RU2H30Q, RU2H30R, RU2H30S, RU2H50Q, RU2H50R
Keywords - RU20T8M7 MOSFET specs
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