All MOSFET. RU20T8M7 Datasheet

 

RU20T8M7 MOSFET. Datasheet pdf. Equivalent


   Type Designator: RU20T8M7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: SDFN2050

 RU20T8M7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RU20T8M7 Datasheet (PDF)

 ..1. Size:328K  ruichips
 ru20t8m7.pdf

RU20T8M7 RU20T8M7

RU20T8M7N-Channel Advanced Power MOSFETFeatures Pin Description 20V/8A,G2S2 RDS (ON) =13m(Typ.)@VGS=4.5VS2 RDS (ON) =14m(Typ.)@VGS=4V RDS (ON) =16m(Typ.)@VGS=3.1V RDS (ON) =18m(Typ.)@VGS=2.5VD1/D2 Super High Dense Cell Design Fast Switching Speed ESD Protected G1S1S1PIN1 100% avalanche testedPIN1 Lead Free and Green Devices Availab

 9.1. Size:251K  ruichips
 ru20t7g.pdf

RU20T8M7 RU20T8M7

RU20T7GN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 20V/7A,RDS (ON) =12m (Typ.) @ VGS=4.5VRDS (ON) =18m (Typ.) @ VGS=2.5V Super High Dense Cell Design Reliable and RuggedTSSOP-8 ESD Protected Lead Free and Green AvailableApplications PWM ApplicationsDual N-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating Unit

Datasheet: RU20E60L , RU20E8H , RU20P18L , RU20P2B , RU20P3B , RU20P4C , RU20P5E , RU20T7G , 8205A , RU2520H , RU2560L , RU2568L , RU2H30Q , RU2H30R , RU2H30S , RU2H50Q , RU2H50R .

 

 
Back to Top