RU2520H MOSFET. Datasheet pdf. Equivalent
Type Designator: RU2520H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.7 V
|Id|ⓘ - Maximum Drain Current: 13 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 19 nC
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 160 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: SOP-8
RU2520H Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RU2520H Datasheet (PDF)
ru2520h.pdf
RU2520HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 25V/13A,RDS (ON) =9m (Typ.) @ VGS=10VRDS (ON) =14.5m (Typ.) @ VGS=4.5V Super High Dense Cell Design Fast Switching and Fully Avalanche Rated 100% avalanche testedSOP-8 Lead Free and Green AvailableApplications Power Management in NotebookComputer, and DC-DC Converters inNet
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: STP265N6F6AG
History: STP265N6F6AG
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918