All MOSFET. RU2520H Datasheet

 

RU2520H Datasheet and Replacement


   Type Designator: RU2520H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: SOP-8
 

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RU2520H Datasheet (PDF)

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RU2520H

RU2520HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 25V/13A,RDS (ON) =9m (Typ.) @ VGS=10VRDS (ON) =14.5m (Typ.) @ VGS=4.5V Super High Dense Cell Design Fast Switching and Fully Avalanche Rated 100% avalanche testedSOP-8 Lead Free and Green AvailableApplications Power Management in NotebookComputer, and DC-DC Converters inNet

Datasheet: RU20E8H , RU20P18L , RU20P2B , RU20P3B , RU20P4C , RU20P5E , RU20T7G , RU20T8M7 , K2611 , RU2560L , RU2568L , RU2H30Q , RU2H30R , RU2H30S , RU2H50Q , RU2H50R , RU2H50S .

History: SGSP230 | FQP7N10 | 4N60AF | IPS60R1K0PFD7S | AOCA72104E | IPS60R400CE | AFP9565S

Keywords - RU2520H MOSFET datasheet

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