RU2560L Specs and Replacement

Type Designator: RU2560L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 195 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO-252

RU2560L substitution

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RU2560L datasheet

 ..1. Size:298K  ruichips
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RU2560L

RU2560L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 25V/55A, RDS (ON) =8m (Typ.)@VGS=10V RDS (ON) =12m (Typ.)@VGS=4.5V Super High Dense Cell Design Reliable and Rugged Fast Switching and Fully Avalanche Rated TO252 Lead Free and Green Devices Available (RoHS Compliant) Applications Power Management in Desktop Computer, Portable Equipm... See More ⇒

 9.1. Size:292K  ruichips
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RU2560L

RU2568L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 25V/60A, RDS (ON) =4m (Typ.)@VGS=10V RDS (ON) =9m (Typ.)@VGS=4.5V Super High Dense Cell Design Reliable and Rugged 100% avalanche tested TO252 Lead Free and Green Devices Available (RoHS Compliant) Applications DC/DC Converters Power Management N-Channel MOSFET Absolute Maximum... See More ⇒

Detailed specifications: RU20P18L, RU20P2B, RU20P3B, RU20P4C, RU20P5E, RU20T7G, RU20T8M7, RU2520H, P60NF06, RU2568L, RU2H30Q, RU2H30R, RU2H30S, RU2H50Q, RU2H50R, RU2H50S, RU2HE2D

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.