All MOSFET. RU2560L Datasheet

 

RU2560L Datasheet and Replacement


   Type Designator: RU2560L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 195 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO-252
 

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RU2560L Datasheet (PDF)

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RU2560L

RU2560LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 25V/55A,RDS (ON) =8m(Typ.)@VGS=10VRDS (ON) =12m(Typ.)@VGS=4.5V Super High Dense Cell Design Reliable and Rugged Fast Switching and Fully Avalanche RatedTO252 Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management in DesktopComputer, Portable Equipm

 9.1. Size:292K  ruichips
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RU2560L

RU2568LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 25V/60A,RDS (ON) =4m(Typ.)@VGS=10VRDS (ON) =9m(Typ.)@VGS=4.5V Super High Dense Cell Design Reliable and Rugged 100% avalanche testedTO252 Lead Free and Green Devices Available(RoHS Compliant)Applications DC/DC Converters Power ManagementN-Channel MOSFETAbsolute Maximum

Datasheet: RU20P18L , RU20P2B , RU20P3B , RU20P4C , RU20P5E , RU20T7G , RU20T8M7 , RU2520H , AO3401 , RU2568L , RU2H30Q , RU2H30R , RU2H30S , RU2H50Q , RU2H50R , RU2H50S , RU2HE2D .

History: NVTFS020N06C | NVTFS5C453NL | DH100P35D | SSM2309GN | SSM2602GY

Keywords - RU2560L MOSFET datasheet

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