IRFS832 Specs and Replacement
Type Designator: IRFS832
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 86 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO220F
IRFS832 substitution
- MOSFET ⓘ Cross-Reference Search
IRFS832 datasheet
irfs830a.pdf
Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 1.169 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V... See More ⇒
Detailed specifications: IRFS820, IRFS820A, IRFS821, IRFS822, IRFS823, IRFS830, IRFS830A, IRFS831, IRFB7545, IRFS833, IRFS840, IRFS840A, IRFS841, IRFS842, IRFS843, IRFS9130, IRFS9131
Keywords - IRFS832 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: AONS36304
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