All MOSFET. RU2H30S Datasheet

 

RU2H30S MOSFET. Datasheet pdf. Equivalent


   Type Designator: RU2H30S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 176 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 116 nC
   trⓘ - Rise Time: 48 nS
   Cossⓘ - Output Capacitance: 308 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: TO-220

 RU2H30S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RU2H30S Datasheet (PDF)

 ..1. Size:324K  ruichips
 ru2h30s.pdf

RU2H30S RU2H30S

RU2H30SN-Channel Advanced Power MOSFETFeatures Pin Description 200V/30A, RDS (ON) =75m(Typ.) @ VGS=10VD Ultra Low On-Resistance Fast Switching and Fully Avalanche Rated 100% avalanche tested 175C Operating Temperature Lead Free and Green AvailableGSTO220DApplications Switching Application Systems UPSGSN-Channel MOSFETAbsolute

 8.1. Size:281K  ruichips
 ru2h30q.pdf

RU2H30S RU2H30S

RU2H30QN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 200V/30A,RDS (ON) =75m (Typ.) @ VGS=10V Ultra Low On-Resistance Fast Switching and Fully Avalanche Rated 100% avalanche tested 175C Operating TemperatureTO-247 Lead Free and Green AvailableApplications Switching Application Systems DC/DC ConvertersN-Channel MOSFETAbs

 8.2. Size:321K  ruichips
 ru2h30r.pdf

RU2H30S RU2H30S

RU2H30RN-Channel Advanced Power MOSFETFeatures Pin Description 200V/30A, RDS (ON) =75m(Typ.) @ VGS=10V Ultra Low On-Resistance Fast Switching and Fully Avalanche Rated 100% avalanche tested 175C Operating Temperature Lead Free and Green AvailableGDSTO220DApplications Switching Application Systems UPSGSN-Channel MOSFETAbsolute

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History: 2SK1132 | PSMN4R5-40BS

 

 
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