RU2H30S Specs and Replacement
Type Designator: RU2H30S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 176 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 48 nS
Cossⓘ - Output Capacitance: 308 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: TO-220
RU2H30S substitution
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RU2H30S datasheet
ru2h30s.pdf
RU2H30S N-Channel Advanced Power MOSFET Features Pin Description 200V/30A, RDS (ON) =75m (Typ.) @ VGS=10V D Ultra Low On-Resistance Fast Switching and Fully Avalanche Rated 100% avalanche tested 175 C Operating Temperature Lead Free and Green Available G S TO220 D Applications Switching Application Systems UPS G S N-Channel MOSFET Absolute... See More ⇒
ru2h30q.pdf
RU2H30Q N-Channel Advanced Power MOSFET MOSFET Features Pin Description 200V/30A, RDS (ON) =75m (Typ.) @ VGS=10V Ultra Low On-Resistance Fast Switching and Fully Avalanche Rated 100% avalanche tested 175 C Operating Temperature TO-247 Lead Free and Green Available Applications Switching Application Systems DC/DC Converters N-Channel MOSFET Abs... See More ⇒
ru2h30r.pdf
RU2H30R N-Channel Advanced Power MOSFET Features Pin Description 200V/30A, RDS (ON) =75m (Typ.) @ VGS=10V Ultra Low On-Resistance Fast Switching and Fully Avalanche Rated 100% avalanche tested 175 C Operating Temperature Lead Free and Green Available G D S TO220 D Applications Switching Application Systems UPS G S N-Channel MOSFET Absolute... See More ⇒
Detailed specifications: RU20P5E, RU20T7G, RU20T8M7, RU2520H, RU2560L, RU2568L, RU2H30Q, RU2H30R, STP65NF06, RU2H50Q, RU2H50R, RU2H50S, RU2HE2D, RU2HE5L, RU30100L, RU30100R, RU30105L
Keywords - RU2H30S MOSFET specs
RU2H30S cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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