All MOSFET. RU2HE2D Datasheet

 

RU2HE2D Datasheet and Replacement


   Type Designator: RU2HE2D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 42 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: SOT-223
 

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RU2HE2D Datasheet (PDF)

 ..1. Size:251K  ruichips
 ru2he2d.pdf pdf_icon

RU2HE2D

RU2HE2DN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 200V/1.2A,RDS (ON) =0.95 (Typ.) @ VGS=10VRDS (ON) =1 (Typ.) @ VGS=4.5V ESD Protected Reliable and RuggedSOT-223 Fast Switching Lead Free and Green AvailableApplications Power Management DC-DC ConverterN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating U

 9.1. Size:289K  ruichips
 ru2he5l.pdf pdf_icon

RU2HE2D

RU2HE5LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 200V/4.2A,RDS (ON) =1(Typ.)@VGS=10VRDS (ON) =1.1(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications DC/DC ConvertersN-Channel MOSFETAbsolute Maximum

Datasheet: RU2560L , RU2568L , RU2H30Q , RU2H30R , RU2H30S , RU2H50Q , RU2H50R , RU2H50S , STP65NF06 , RU2HE5L , RU30100L , RU30100R , RU30105L , RU30105R , RU30106L , RU3010H , RU30120L .

History: SMK1360FD

Keywords - RU2HE2D MOSFET datasheet

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