RU2HE2D Specs and Replacement

Type Designator: RU2HE2D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 42 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: SOT-223

RU2HE2D substitution

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RU2HE2D datasheet

 ..1. Size:251K  ruichips
 ru2he2d.pdf pdf_icon

RU2HE2D

RU2HE2D N-Channel Advanced Power MOSFET MOSFET Features Pin Description 200V/1.2A, RDS (ON) =0.95 (Typ.) @ VGS=10V RDS (ON) =1 (Typ.) @ VGS=4.5V ESD Protected Reliable and Rugged SOT-223 Fast Switching Lead Free and Green Available Applications Power Management DC-DC Converter N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating U... See More ⇒

 9.1. Size:289K  ruichips
 ru2he5l.pdf pdf_icon

RU2HE2D

RU2HE5L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 200V/4.2A, RDS (ON) =1 (Typ.)@VGS=10V RDS (ON) =1.1 (Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and Rugged TO252 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Applications DC/DC Converters N-Channel MOSFET Absolute Maximum ... See More ⇒

Detailed specifications: RU2560L, RU2568L, RU2H30Q, RU2H30R, RU2H30S, RU2H50Q, RU2H50R, RU2H50S, IRFZ46N, RU2HE5L, RU30100L, RU30100R, RU30105L, RU30105R, RU30106L, RU3010H, RU30120L

Keywords - RU2HE2D MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.