All MOSFET. RU2HE5L Datasheet

 

RU2HE5L MOSFET. Datasheet pdf. Equivalent


   Type Designator: RU2HE5L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4.2 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 8 nC
   trⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO-252

 RU2HE5L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RU2HE5L Datasheet (PDF)

 ..1. Size:289K  ruichips
 ru2he5l.pdf

RU2HE5L RU2HE5L

RU2HE5LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 200V/4.2A,RDS (ON) =1(Typ.)@VGS=10VRDS (ON) =1.1(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications DC/DC ConvertersN-Channel MOSFETAbsolute Maximum

 9.1. Size:251K  ruichips
 ru2he2d.pdf

RU2HE5L RU2HE5L

RU2HE2DN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 200V/1.2A,RDS (ON) =0.95 (Typ.) @ VGS=10VRDS (ON) =1 (Typ.) @ VGS=4.5V ESD Protected Reliable and RuggedSOT-223 Fast Switching Lead Free and Green AvailableApplications Power Management DC-DC ConverterN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating U

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRF250C

 

 
Back to Top