RU30100L PDF and Equivalents Search

 

RU30100L Specs and Replacement

Type Designator: RU30100L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 103 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 580 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm

Package: TO-252

RU30100L substitution

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RU30100L datasheet

 ..1. Size:296K  ruichips
ru30100l.pdf pdf_icon

RU30100L

RU30100L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/100A, RDS (ON) =2.2 m (Typ.)@VGS=10V RDS (ON) =4 m (Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-252 Lead Free and Green Devices Available (RoHS Compliant) Applications High Frequency Synchronous Buck Converters for Computer Proces... See More ⇒

 7.1. Size:306K  ruichips
ru30100r.pdf pdf_icon

RU30100L

RU30100R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/110A, RDS (ON) =4 m (Typ.)@VGS=10V RDS (ON) =5.5m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters and Off-line UPS N-Channel MOSFET Absolute Max... See More ⇒

 8.1. Size:281K  ruichips
ru3010h.pdf pdf_icon

RU30100L

RU3010H N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/8A, RDS (ON) =18m (Typ.) @ VGS=10V RDS (ON) =40m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Available SOP-8 Applications SMPS N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25 C Unless Other... See More ⇒

 8.2. Size:304K  ruichips
ru30105r.pdf pdf_icon

RU30100L

RU30105R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/125A, RDS (ON) =3.2 m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters and Off-line UPS N-Channel MOSFET Absolute Maximum Ratings Symbol Paramete... See More ⇒

Detailed specifications: RU2H30Q , RU2H30R , RU2H30S , RU2H50Q , RU2H50R , RU2H50S , RU2HE2D , RU2HE5L , IRLB3034 , RU30100R , RU30105L , RU30105R , RU30106L , RU3010H , RU30120L , RU30120S , RU3013H .

History: IPP60R1K4C6 | IPP50R500CE

Keywords - RU30100L MOSFET specs

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