All MOSFET. RU3090M Datasheet

 

RU3090M Datasheet and Replacement


   Type Designator: RU3090M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 4.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 29 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 850 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: PDFN5060
 

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RU3090M Datasheet (PDF)

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RU3090M

RU3090M N-Channel Advanced Power MOSFET Features Pin Description 30V/98A, RDS (ON) =1.7m(Typ.)@VGS=10V RDS (ON) =3.2m(Typ.)@VGS=4.5V Super High Dense Cell Design Reliable and Rugged 100% avalanche tested PDFN5060 Lead Free and Green Devices Available (RoHS Compliant) Applications DC/DC Conversion Switching Application N-Channel MO

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RU3090M

RU3091MN-Channel Advanced Power MOSFETFeatures Pin Description 30V/90A,DRDS (ON) =2.8m(Typ.)@VGS=10V DDDRDS (ON) =3.4m(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance Fast Switching SpeedG 100% avalanche tested SSSPIN1 Lead Free and Green Devices Available (RoHS Compliant)PIN1PDFN5060DApplications DC/DC

Datasheet: RU3040M2 , RU304B , RU3050L , RU3065L , RU306C , RU3070L , RU3070M , RU3089L , 10N60 , RU30C8H , RU30D10H , RU30D8H , RU30E30L , RU30E40L , RU30E4B , RU30E60M2 , RU30E7H .

History: SSM9974GS | NTTFS4C10N | HSBA3058 | STI60N55F3 | NP60N04MUG | SNN4010D | IRFB7446PBF

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