All MOSFET. RU3090M Datasheet

 

RU3090M MOSFET. Datasheet pdf. Equivalent


   Type Designator: RU3090M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 4.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 29 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 58 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 850 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: PDFN5060

 RU3090M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RU3090M Datasheet (PDF)

 ..1. Size:305K  ruichips
 ru3090m.pdf

RU3090M RU3090M

RU3090M N-Channel Advanced Power MOSFET Features Pin Description 30V/98A, RDS (ON) =1.7m(Typ.)@VGS=10V RDS (ON) =3.2m(Typ.)@VGS=4.5V Super High Dense Cell Design Reliable and Rugged 100% avalanche tested PDFN5060 Lead Free and Green Devices Available (RoHS Compliant) Applications DC/DC Conversion Switching Application N-Channel MO

 9.1. Size:662K  ruichips
 ru3091m.pdf

RU3090M RU3090M

RU3091MN-Channel Advanced Power MOSFETFeatures Pin Description 30V/90A,DRDS (ON) =2.8m(Typ.)@VGS=10V DDDRDS (ON) =3.4m(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance Fast Switching SpeedG 100% avalanche tested SSSPIN1 Lead Free and Green Devices Available (RoHS Compliant)PIN1PDFN5060DApplications DC/DC

Datasheet: RU3040M2 , RU304B , RU3050L , RU3065L , RU306C , RU3070L , RU3070M , RU3089L , IRF3710 , RU30C8H , RU30D10H , RU30D8H , RU30E30L , RU30E40L , RU30E4B , RU30E60M2 , RU30E7H .

 

 
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