RU35122S Datasheet and Replacement
Type Designator: RU35122S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 105 nS
Cossⓘ - Output Capacitance: 970 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
Package: TO-263
RU35122S substitution
RU35122S Datasheet (PDF)
ru35122s.pdf
RU35122SN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/120A,RDS (ON) =2.7m (Typ.) @ VGS=10V Ultra Low On-Resistance Fast Switching 100% avalanche tested 175C Operating TemperatureTO-263 Lead Free,RoHS compliantApplications Switching Application Systems UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter R
ru35122r.pdf
RU35122RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/120A,RDS (ON) =2.7m (Typ.) @ VGS=10V Ultra Low On-Resistance Fast Switching 100% avalanche testedTO-220 175C Operating Temperature Lead Free,RoHS compliantApplications Switching Application Systems UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter R
Datasheet: RU30P4C , RU30P4C6 , RU30P4H , RU30P5D , RU30P5H , RU30S4H , RU30S5H , RU35122R , AO3400 , RU3520H , RU3560L , RU3568L , RU3568R , RU3582R , RU3582S , RU3710R , RU3710S .
History: STH270N8F7-6 | IRFAE30
Keywords - RU35122S MOSFET datasheet
RU35122S cross reference
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History: STH270N8F7-6 | IRFAE30
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