All MOSFET. RU3520H Datasheet

 

RU3520H Datasheet and Replacement


   Type Designator: RU3520H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: SOP-8
 

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RU3520H Datasheet (PDF)

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RU3520H

RU3520HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/9A,RDS (ON) =14m (Typ.) @ VGS=10VRDS (ON) =21m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged 100% avalanche testedSOP-8 Lead Free and Green AvailableApplications High Frequency Buck Converters forComputer Processor Power.High Frequency Isolated D

Datasheet: RU30P4C6 , RU30P4H , RU30P5D , RU30P5H , RU30S4H , RU30S5H , RU35122R , RU35122S , SPP20N60C3 , RU3560L , RU3568L , RU3568R , RU3582R , RU3582S , RU3710R , RU3710S , RU40120M .

History: IRFB4228PBF | ME2308D-G

Keywords - RU3520H MOSFET datasheet

 RU3520H cross reference
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