RU3520H Specs and Replacement

Type Designator: RU3520H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: SOP-8

RU3520H substitution

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RU3520H datasheet

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RU3520H

RU3520H N-Channel Advanced Power MOSFET MOSFET Features Pin Description 40V/9A, RDS (ON) =14m (Typ.) @ VGS=10V RDS (ON) =21m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged 100% avalanche tested SOP-8 Lead Free and Green Available Applications High Frequency Buck Converters for Computer Processor Power. High Frequency Isolated D... See More ⇒

Detailed specifications: RU30P4C6, RU30P4H, RU30P5D, RU30P5H, RU30S4H, RU30S5H, RU35122R, RU35122S, K3569, RU3560L, RU3568L, RU3568R, RU3582R, RU3582S, RU3710R, RU3710S, RU40120M

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