RU3560L Specs and Replacement

Type Designator: RU3560L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: TO-252

RU3560L substitution

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RU3560L datasheet

 ..1. Size:298K  ruichips
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RU3560L

RU3560L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 40V/50A, RDS (ON) =13m (Typ.)@VGS=10V RDS (ON) =18m (Typ.)@VGS=4.5V Super High Dense Cell Design Reliable and Rugged Fast Switching and Fully Avalanche Rated TO252 Lead Free and Green Devices Available (RoHS Compliant) Applications Low Voltage Inverter Applications N-Channel MOSFET ... See More ⇒

 9.1. Size:303K  ruichips
ru3568r.pdf pdf_icon

RU3560L

RU3568R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/68A, RDS (ON) =6m (Typ.)@VGS=10V RDS (ON) =10m (Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters N-Channel MOSFET Absolute Maximum Ratings Symbol... See More ⇒

 9.2. Size:329K  ruichips
ru3568l.pdf pdf_icon

RU3560L

RU3568L N-Channel Advanced Power MOSFET Features Pin Description 30V/60A, RDS (ON) =6m (Typ.)@VGS=10V D RDS (ON) =10m (Typ.)@VGS=4.5V Super High Dense Cell Design Reliable and Rugged 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) G S TO252 D Applications DC/DC Converters G S N-Channel MOSFET Absolute Maximum Ratings S... See More ⇒

Detailed specifications: RU30P4H, RU30P5D, RU30P5H, RU30S4H, RU30S5H, RU35122R, RU35122S, RU3520H, IRFP260, RU3568L, RU3568R, RU3582R, RU3582S, RU3710R, RU3710S, RU40120M, RU40120R

Keywords - RU3560L MOSFET specs

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