All MOSFET. RU3582S Datasheet

 

RU3582S Datasheet and Replacement


   Type Designator: RU3582S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 95 nS
   Cossⓘ - Output Capacitance: 480 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO-263
 

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RU3582S Datasheet (PDF)

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RU3582S

RU3582SN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/100A,RDS (ON) =5m (Typ.) @ VGS=10V Ultra Low On-Resistance Fast Switching 100% avalanche tested 175C Operating TemperatureTO-263 Lead Free,RoHS compliantApplications Switching Application Systems UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rati

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RU3582S

RU3582RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/100A,RDS (ON) =5m (Typ.) @ VGS=10V Ultra Low On-Resistance Fast Switching 100% avalanche testedTO-220 175C Operating Temperature Lead Free,RoHS compliantApplications Switching Application Systems UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rati

Datasheet: RU30S5H , RU35122R , RU35122S , RU3520H , RU3560L , RU3568L , RU3568R , RU3582R , IRFB3607 , RU3710R , RU3710S , RU40120M , RU40120R , RU40120S , RU40130R , RU40150R , RU40150S .

History: BRCS2321MA | UT100N03 | FHF4N65E | APT50M75JLLU2 | P2504EI | PDC3902X | HGN170N10AL

Keywords - RU3582S MOSFET datasheet

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