RU3582S Specs and Replacement

Type Designator: RU3582S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 107 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 95 nS

Cossⓘ - Output Capacitance: 480 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: TO-263

RU3582S substitution

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RU3582S datasheet

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 ru3582s.pdf pdf_icon

RU3582S

RU3582S N-Channel Advanced Power MOSFET MOSFET Features Pin Description 40V/100A, RDS (ON) =5m (Typ.) @ VGS=10V Ultra Low On-Resistance Fast Switching 100% avalanche tested 175 C Operating Temperature TO-263 Lead Free,RoHS compliant Applications Switching Application Systems UPS N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rati... See More ⇒

 8.1. Size:301K  ruichips
 ru3582r.pdf pdf_icon

RU3582S

RU3582R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 40V/100A, RDS (ON) =5m (Typ.) @ VGS=10V Ultra Low On-Resistance Fast Switching 100% avalanche tested TO-220 175 C Operating Temperature Lead Free,RoHS compliant Applications Switching Application Systems UPS N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rati... See More ⇒

Detailed specifications: RU30S5H, RU35122R, RU35122S, RU3520H, RU3560L, RU3568L, RU3568R, RU3582R, K4145, RU3710R, RU3710S, RU40120M, RU40120R, RU40120S, RU40130R, RU40150R, RU40150S

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