RU4089R MOSFET. Datasheet pdf. Equivalent
Type Designator: RU4089R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 111 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 89 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 45 nC
Rise Time (tr): 90 nS
Drain-Source Capacitance (Cd): 380 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0065 Ohm
Package: TO-220
RU4089R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RU4089R Datasheet (PDF)
..1. Size:306K ruichips
ru4089r.pdf
ru4089r.pdf
RU4089RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/89A,RDS (ON) =5m (Typ.)@VGS=10VRDS (ON) =6m (Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications Switching ApplicationsN-Channel MOSFETAbsolute Maximum Ratings
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
