RU4089R Specs and Replacement

Type Designator: RU4089R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 111 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 89 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

Cossⓘ - Output Capacitance: 380 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: TO-220

RU4089R substitution

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RU4089R datasheet

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RU4089R

RU4089R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 40V/89A, RDS (ON) =5m (Typ.)@VGS=10V RDS (ON) =6m (Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications Switching Applications N-Channel MOSFET Absolute Maximum Ratings ... See More ⇒

Detailed specifications: RU40150S, RU40190Q2, RU40190S, RU40220R, RU40231Q2, RU40231R, RU40280R, RU4068L, BS170, RU4090L, RU4095L, RU4099Q, RU4099R, RU40E25L, RU40E32L, RU40E80L, RU40L10H

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