All MOSFET. RU4089R Datasheet

 

RU4089R Datasheet and Replacement


   Type Designator: RU4089R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 111 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 89 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 380 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO-220
 

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RU4089R Datasheet (PDF)

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RU4089R

RU4089RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/89A,RDS (ON) =5m (Typ.)@VGS=10VRDS (ON) =6m (Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications Switching ApplicationsN-Channel MOSFETAbsolute Maximum Ratings

Datasheet: RU40150S , RU40190Q2 , RU40190S , RU40220R , RU40231Q2 , RU40231R , RU40280R , RU4068L , 18N50 , RU4090L , RU4095L , RU4099Q , RU4099R , RU40E25L , RU40E32L , RU40E80L , RU40L10H .

History: NCEP016N60VD

Keywords - RU4089R MOSFET datasheet

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