RU40P4H MOSFET. Datasheet pdf. Equivalent
Type Designator: RU40P4H
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 4.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 14 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 95 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: SOP-8
RU40P4H Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RU40P4H Datasheet (PDF)
ru40p4h.pdf
RU40P4HP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -40V/-4.5A,RDS (ON) =60m (Typ.) @ VGS=-10VRDS (ON) =80m (Typ.) @ VGS=-4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green AvailableSOP-8Applications Load Switches.P-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA=25
ru40p3c.pdf
RU40P3CP-Channel Advanced Power MOSFETFeatures Pin Description -40V/-3A, RDS (ON) =100m(Typ.)@VGS=-10VD RDS (ON) =150m(Typ.)@VGS=-4.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)GSSOT23-3DApplications Load SwitchDC/DC ConverterGSP-Channel MOSFETAbsolut
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