RU40P4H Datasheet and Replacement
Type Designator: RU40P4H
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 95 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: SOP-8
RU40P4H substitution
RU40P4H Datasheet (PDF)
ru40p4h.pdf

RU40P4HP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -40V/-4.5A,RDS (ON) =60m (Typ.) @ VGS=-10VRDS (ON) =80m (Typ.) @ VGS=-4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green AvailableSOP-8Applications Load Switches.P-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA=25
ru40p3c.pdf

RU40P3CP-Channel Advanced Power MOSFETFeatures Pin Description -40V/-3A, RDS (ON) =100m(Typ.)@VGS=-10VD RDS (ON) =150m(Typ.)@VGS=-4.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)GSSOT23-3DApplications Load SwitchDC/DC ConverterGSP-Channel MOSFETAbsolut
Datasheet: RU4099Q , RU4099R , RU40E25L , RU40E32L , RU40E80L , RU40L10H , RU40L10L , RU40P3C , 2N60 , RU40S4H , RU4H10P , RU4H10R , RU55111R , RU55200Q , RU55L18L , RU55L18R , RU5H13R .
History: IRF7351
Keywords - RU40P4H MOSFET datasheet
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RU40P4H lookup
RU40P4H substitution
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History: IRF7351



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