All MOSFET. RU40S4H Datasheet

 

RU40S4H Datasheet and Replacement


   Type Designator: RU40S4H
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: SOP-8
 

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RU40S4H Datasheet (PDF)

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RU40S4H

RU40S4HP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -40V/-4A,RDS (ON) =65m (Typ.) @ VGS=-10VRDS (ON) =85m (Typ.) @ VGS=-4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green AvailableSOP-8Applications Power Management.Dual P-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings

Datasheet: RU4099R , RU40E25L , RU40E32L , RU40E80L , RU40L10H , RU40L10L , RU40P3C , RU40P4H , CS150N03A8 , RU4H10P , RU4H10R , RU55111R , RU55200Q , RU55L18L , RU55L18R , RU5H13R , RU5H18Q .

History: IPN80R900P7

Keywords - RU40S4H MOSFET datasheet

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