RU40S4H MOSFET. Datasheet pdf. Equivalent
Type Designator: RU40S4H
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 14 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 95 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: SOP-8
RU40S4H Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RU40S4H Datasheet (PDF)
..1. Size:291K ruichips
ru40s4h.pdf
ru40s4h.pdf
RU40S4HP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -40V/-4A,RDS (ON) =65m (Typ.) @ VGS=-10VRDS (ON) =85m (Typ.) @ VGS=-4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green AvailableSOP-8Applications Power Management.Dual P-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
