RU40S4H Specs and Replacement

Type Designator: RU40S4H

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: SOP-8

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RU40S4H datasheet

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RU40S4H

RU40S4H P-Channel Advanced Power MOSFET MOSFET Features Pin Description -40V/-4A, RDS (ON) =65m (Typ.) @ VGS=-10V RDS (ON) =85m (Typ.) @ VGS=-4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Available SOP-8 Applications Power Management. Dual P-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings ... See More ⇒

Detailed specifications: RU4099R, RU40E25L, RU40E32L, RU40E80L, RU40L10H, RU40L10L, RU40P3C, RU40P4H, IRF520, RU4H10P, RU4H10R, RU55111R, RU55200Q, RU55L18L, RU55L18R, RU5H13R, RU5H18Q

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