RU4H10P Specs and Replacement

Type Designator: RU4H10P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 175 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm

Package: TO-220F

RU4H10P substitution

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RU4H10P datasheet

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 ru4h10p.pdf pdf_icon

RU4H10P

RU4H10P N-Channel Advanced Power MOSFET MOSFET Features Pin Description 400V/10A, RDS (ON) =0.45 (Typ.) @ VGS=10V Gate charge minimized Low Crss( Typ. 18pF) Extremely high dv/dt capability 100% avalanche tested TO-220F Lead Free and Green Available Applications High efficiency switch mode power supplies N-Channel MOSFET Lighting Absolute Maxim... See More ⇒

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 ru4h10r.pdf pdf_icon

RU4H10P

RU4H10R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 400V/10A, RDS (ON) =0.45 (Typ.) @ VGS=10V Gate charge minimized Low Crss( Typ. 23pF) Extremely high dv/dt capability TO-220 100% avalanche tested Lead Free and Green Available Applications High efficiency switch mode power supplies N-Channel MOSFET Lighting Absolute Maximu... See More ⇒

Detailed specifications: RU40E25L, RU40E32L, RU40E80L, RU40L10H, RU40L10L, RU40P3C, RU40P4H, RU40S4H, IRF2807, RU4H10R, RU55111R, RU55200Q, RU55L18L, RU55L18R, RU5H13R, RU5H18Q, RU5H5L

Keywords - RU4H10P MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.