All MOSFET. RU4H10P Datasheet

 

RU4H10P Datasheet and Replacement


   Type Designator: RU4H10P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: TO-220F
 

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RU4H10P Datasheet (PDF)

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RU4H10P

RU4H10PN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 400V/10A,RDS (ON) =0.45 (Typ.) @ VGS=10V Gate charge minimized Low Crss( Typ. 18pF) Extremely high dv/dt capability 100% avalanche testedTO-220F Lead Free and Green AvailableApplications High efficiency switch mode powersuppliesN-Channel MOSFET LightingAbsolute Maxim

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RU4H10P

RU4H10RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 400V/10A,RDS (ON) =0.45 (Typ.) @ VGS=10V Gate charge minimized Low Crss( Typ. 23pF) Extremely high dv/dt capabilityTO-220 100% avalanche tested Lead Free and Green AvailableApplications High efficiency switch mode powersuppliesN-Channel MOSFET LightingAbsolute Maximu

Datasheet: RU40E25L , RU40E32L , RU40E80L , RU40L10H , RU40L10L , RU40P3C , RU40P4H , RU40S4H , IRFB31N20D , RU4H10R , RU55111R , RU55200Q , RU55L18L , RU55L18R , RU5H13R , RU5H18Q , RU5H5L .

History: SIRA14DP | HSBA3062 | SSB20N60S | NTTFS5C680NL | NCE30P50G | IPI80N06S3-07 | SWF18N65D

Keywords - RU4H10P MOSFET datasheet

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