All MOSFET. RU55111R Datasheet

 

RU55111R Datasheet and Replacement


   Type Designator: RU55111R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 176 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 380 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO-220
 

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RU55111R Datasheet (PDF)

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RU55111R

RU55111RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 55V/110A,RDS (ON) =5m(Typ.)@VGS=10VRDS (ON) =7m(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters and Off-line UPSN-Channel MOSFETAbsolute Maxim

Datasheet: RU40E80L , RU40L10H , RU40L10L , RU40P3C , RU40P4H , RU40S4H , RU4H10P , RU4H10R , AON6380 , RU55200Q , RU55L18L , RU55L18R , RU5H13R , RU5H18Q , RU5H5L , RU5H5P , RU5H5R .

History: YTF150

Keywords - RU55111R MOSFET datasheet

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