All MOSFET. RU55111R Datasheet

 

RU55111R MOSFET. Datasheet pdf. Equivalent


   Type Designator: RU55111R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 176 W
   Maximum Drain-Source Voltage |Vds|: 55 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
   Maximum Drain Current |Id|: 110 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 73 nC
   Rise Time (tr): 24 nS
   Drain-Source Capacitance (Cd): 380 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0065 Ohm
   Package: TO-220

 RU55111R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RU55111R Datasheet (PDF)

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 ru55111r.pdf

RU55111R RU55111R

RU55111RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 55V/110A,RDS (ON) =5m(Typ.)@VGS=10VRDS (ON) =7m(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters and Off-line UPSN-Channel MOSFETAbsolute Maxim

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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