RU55111R Specs and Replacement

Type Designator: RU55111R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 176 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 380 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: TO-220

RU55111R substitution

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RU55111R datasheet

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RU55111R

RU55111R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 55V/110A, RDS (ON) =5m (Typ.)@VGS=10V RDS (ON) =7m (Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters and Off-line UPS N-Channel MOSFET Absolute Maxim... See More ⇒

Detailed specifications: RU40E80L, RU40L10H, RU40L10L, RU40P3C, RU40P4H, RU40S4H, RU4H10P, RU4H10R, IRFZ24N, RU55200Q, RU55L18L, RU55L18R, RU5H13R, RU5H18Q, RU5H5L, RU5H5P, RU5H5R

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs