All MOSFET. RU55L18L Datasheet

 

RU55L18L Datasheet and Replacement


   Type Designator: RU55L18L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 625 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
   Package: TO-252
 

 RU55L18L substitution

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RU55L18L Datasheet (PDF)

 ..1. Size:308K  ruichips
 ru55l18l.pdf pdf_icon

RU55L18L

RU55L18LP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -60V/-16A,RDS (ON) =100m(Typ.)@VGS=-10VRDS (ON) =125m(Typ.)@VGS=-4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management Load Switch DC/DC C

 7.1. Size:320K  ruichips
 ru55l18r.pdf pdf_icon

RU55L18L

RU55L18RP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -60V/-16A,RDS (ON) =100m(Typ.)@VGS=-10VRDS (ON) =125m(Typ.)@VGS=-4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO-220 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management Load Switch DC/DC

Datasheet: RU40L10L , RU40P3C , RU40P4H , RU40S4H , RU4H10P , RU4H10R , RU55111R , RU55200Q , IRFB31N20D , RU55L18R , RU5H13R , RU5H18Q , RU5H5L , RU5H5P , RU5H5R , RU5H8P , RU5H8R .

History: NTLJF3118NTAG | NTMS5838NLR2G

Keywords - RU55L18L MOSFET datasheet

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